Abstract
Monolithic Ga 0.49In 0.51P/GaAs cascade solar cells with a p +/n + GaAs tunnel junction were grown by MOCVD technique. The variation of the photovoltage, photocurrent, fill factor, efficiency, I–V characteristics and spectral response under different temperatures (25–75 °C), and light intensity values (1–40 sun), were investigated experimentally. The open-circuit voltage of the multijunction cell decreases with the temperature increase at a rate of 5.5 mV/°C. The efficiency of the cascade structure under investigation was increased with an increase in the light concentration up to a point where the series resistance and the tunnel junction effects become significant.
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