Abstract
A thin film growth model with the consideration of transient nucleation was proposed to simulate the vapor deposition process onto solid surface. This model is based on the mechanism of surface diffusion of adatoms, and the adatom concentration distribution is obtained by solving the diffusion equation around stable clusters The computation procedure is divided into a sequence of time stages in order to solve the time dependent problem. The cluster density and cluster size distribution can thus be obtained in every time stage. The results show that the transient stage can not be neglected for the case of completed condensation. The effect of adatoms consumption by stable clusters is important only in the later stage of the process when a significant number of stable clusters are formed. The effects of substrate temperature on the nucleation rate and the cluster growth are also discussed.
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