Abstract
The dependence of silicon doping level in MOVPE GaAs has been determined as a function of growth temperature and substrate crystallographic orientation. The epitaxial layers were simultaneously grown at 60 Torr from TMGa, AsH 3 and SiH 4 source materials on substrates having different orientations. Hall measurements, electrochemical profiling and SIMS were used to characterize the Si doping level and compensation ratio. The dopant incorporation was found to depend on the degree of misorientation from the (100) plane, decreasing by up to 50% for 4° off the exact (100). It was also found that this effect was strongest for growth temperatures in the 600 to 650°C range, while layers grown above 700°C exhibited no measurable orientation dependence. A dopant incorporation mechanism is advanced that is compatible with earlier theories and these new results.
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