Abstract
In this work we examine the response of minority carriers in metal-insulator-semiconductor (MIS) capacitors to small-amplitude step excitation for times sufficiently short to preclude the attainment of equilibrium. The analysis, carried out in the depletion and weak inversion regimes, is shown to be consistent with previously described phenomenological arguments regarding the response in heavy inversion. In addition, the present analysis takes into account changes in minority carrier population produced by surface-state generation or other phenomena. The results are used to describe the response of the surface minority-carrier density to square-wave excitation in a surface-state-free structure.
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