The effects of Si-doping on the properties of CaCu&lt;inf&gt;3&lt;/inf&gt;Ti&lt;inf&gt;4&lt;/inf&gt;O&lt;inf&gt;12&lt;/inf&gt; ceramics

Jinqiang He,Chunjiang Lin,Hui Wang,Jiajun Lin,Shengtao Li

doi:10.1109/ceidp.2013.6748227

Abstract

CaCu 3 Ti 4 O 12 (CCTO) ceramics as a dielectric material are of potential applications in capacitors and memory devices, however, how to further improve the dielectric properties of CCTO ceramics is still a challenge. The dielectric behavior of this material can be manipulated via the modification in composition, and Si as a glass phase should have an impact on the properties of CCTO ceramics, this work investigated the effects of Si-doping on CaCu 3 Ti 4 O 12 with the aim of improving dielectric characteristics. CaCu 3 Ti 4 O 12 ceramics of various Si-doping concentrations were synthesized by solid state reaction method at 1050 C. The microstructure and the dielectric properties of Si-doped and undoped CaCu 3 Ti 4 O 12 were studied. It is found that the added silicon can be incorporated into the structure of CaCu 3 Ti 4 O 12 , a certain amount of Si-doping would facilitate the grain growth, promote the precipitation of intergranular phase, and improve the compactness and homogeneity of CaCu 3 Ti 4 O 12 ceramics. Si-doped CaCu 3 Ti 4 O 12 samples show significantly higher dielectric constant, accompanied by larger dielectric loss. The temperature dependence of dielectric permittivity ε" for various frequencies shows three successive sets of peaks attributed to intrinsic relaxation polarization processes, suggesting that Si-doping has little influence on the relaxation mechanism of CaCu 3 Ti 4 O 12 ceramics.

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