Abstract
Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor (VDMOS) devices with composite SiO2—Si3N4 film gates are investigated. The relationships among the important electrical parameters of the samples with different thickness SiO2—Si3N4 films, such as threshold voltage, breakdown voltage, and on-state resistance in accumulated dose, are discussed. The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose. However, the relationships between the threshold voltages of the samples and the accumulated dose are more complex, and not only positively drift, but also negatively drift. At the end of the total dose experiment, we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies. We find that the samples with appropriate thickness ratio SiO2—Si3N4 films have a good radiation-hardening ability. This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2—Si3N4 films.
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