Abstract
An account is given of proton hombardment tests on samples of silicon and gallium arsenide solar cells at energies ranging from 25 to 140 MeV. The effects of radiation damage on the performance parameters of such cells are discussed, with particular reference to the influence of factors such as absorption characteristic, junction depth, minority carrier lifetime, type of cell ( p-on- n or n-on- p) and proton energy. The results indicate that at the most damaging energy levels silicon cells lose about 75 per cent of their initial output after 10 13 protons/cm 2. Gallium arsenide cells are much more resistant to radiation.
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