Abstract
The purpose of these experiments was to determine the dependence of deposition rate on gas pressure in a typical rf diode sputtering system and to interpret the observed results in terms of the changes in the sputtering conditions. It was found that the deposition rate increased as the pressure was raised from 3 × 10 −3 (0.4 Nm −2 to 10 −2 torr (1.33 Nm −2, for Cu, Ti, Ta but not for Al which remained almost constant. It was also found as the pressure was raised from 3 × 10 −3 (0.4 Nm −2) that the percentage increase in deposition rate was greatest for the sputtered material with highest atomic weight; an explanation of this phenomenon is suggested.
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