Abstract
The puller thermal history effect on axial oxygen precipitation depends on the subsequent heat treatment. Two approaches can improve the axial oxygen precipitation uniformity after a two‐step heat treatment . A high temperature rapid thermal process (RTP) preheating, 1200°C for 2 min in argon ambient can influence the thermal history effect by reducing the oxygen precipitation at the seed‐end of the crystal in comparison to the tang‐end. Low temperature preheat treatments, such as thermal donor annihilation heat treatment and polysilicon CVD processes, can increase the oxygen precipitation of the tang‐end wafers much more than that of the seed‐end and, therefore, also increase the uniformity of the precipitation.
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