Abstract
The gate oxide integrity (GOI) of FZ crystals is independent but the GOI of CZ crystals is strongly dependent on the polishing conditions which means whether mechanical or chemical components are dominant. The GOI of CZ crystals is clearly improved by etching of surface layers, that is, 0.5 µm in depth by mixed acid and 0.04 µm by NH4OH/H2O2 solution. MCZ crystals with low concentration of oxygen (∼10 ppma) always show higher GOI yields than CZ crystals with high concentration of oxygen (∼18 ppma). The above etching effects suggest that the polishing damages existing in as polished surfaces cause the GOI degradations together with the oxygen atoms in silicon crystals.
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