Abstract
The thermal stability of pure HfO 2 thin films is not high enough to withstand thermal processes, such as S/D activation or post-metal annealing, in modern industrial CMOS production. In addition, plasma nitridation technology has been employed for increasing the dielectric constant of silicon dioxide and preventing boron penetration. In this experiment, atomic layer deposition (ALD) technology was used to deposit HfO 2 thin films and inductively coupled plasma (ICP) technology was used to perform plasma nitridation process. The C– V and J– V characteristics of the nitrided samples were observed to estimate the effect of the nitridation process. According to this study, plasma nitridation process would be an effective method to improve the thermal stability of HfO 2 thin films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
