Abstract
Photo-assisted (PA) MOCVD has been used under low-pressure conditions of 3 Torr to grow ZnS films on (100) GaAs substrates. This method has been shown to enhance the Na acceptor-bound exciton line at 3.783 eV at 4.2 K in intentionally Na-doped ZnS films. The growth rate was not enhanced by the PAMOCVD, but the crystal quality was found to be significantly improved as evidenced by the appearance of free-exciton emission around 3.80 eV. It is tentatively proposed that the observed effects are due to Zn atom desorption which allows Na ions to be incorporated as acceptors.
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