Abstract
AbstractThe electromigration behavior of pure Al lines passivated with oxides of different thicknesses and passivation deposition temperatures was studied. The initial hydrostatic stress states of the passivated Al lines were modeled with finite element modeling (FEM), and, when possible, measured with X-ray diffraction. Conventional wafer-level electromigration tests showed a clear passivation thickness effect, but no detectable effect of initial stress on electromigration lifetimes. Increasing the passivation thickness increased the electromigration lifetimes, which has been observed by other researchers. However, in a sample set where the Al lines were covered with a thin (0. 1µm) oxide layer, the lifetimes were much longer than expected. Differences in the damage morphology and the failure mechanism between the thin and thicker oxides accounted for this unexpected result.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
