The effects of oxygen content in Ti/Si layer systems on MCs + SIMS analysis

Abstract

In secondary ion mass spectrometry (SIMS), profiling with a Cs + primary beam and detection of the ejected species MCs + are currently used in quantitative analysis to minimize matrix effects. On the other hand, the use of oxygen leakage in conventional SIMS analysis is also known to be helpful in quantitative analysis as it also reduces the matrix effects on the sputtering yields. Making use of the Cs +-SIMS technique, depth profiling of Ti/Si layers with varying oxygen content shows that mass interferences of the detected molecule CsSi + with CsTi 3O + and CsCO + occur and lead to quantification errors.