Abstract
The effect of the nitrogenation on the electrochemical properties of nanocrystalline diamond films produced by microwave plasma CVD in CH 4–Ar–H 2–N 2 gas mixtures was studied systematically, using cyclic voltammetry and electrochemical impedance spectroscopy measurements, for the first time. Differential capacitance, kinetic parameters of reactions in [Fe(CN) 6] 3-/4-redox system and potential window were found to be sensitive to the nitrogen concentration in the process gas. With its increase (from 0 to 25%), a transition of the NCD film behavior from “poor conductor” to metal-like character takes place. The heavily N-doped nanocrystalline diamond films have satisfactory electrochemical properties to be used as electrodes.
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