Abstract
We studied the influence of nanocrystalline silicon (nc-Si) thin film thickness on top gate nc-Si thin film transistor (TFT) fabricated at 180 ℃. The nc-Si thickness affects the characteristics of nc-Si TFT due to the nc-Si growth similar to a columnar. As the thickness of nc-Si increases from 40 ㎚ to 200 ㎚, the grain size was increased from 20 ㎚ to 40 ㎚. Having a large grain size, the thick nc-Si TFT surpasses the thin nc-Si TFT in terms of electrical characteristics such as field effect mobility. The channel resistance was decreased due to growth of the grain. We obtained the experimental results that the field effect mobility of the fabricated devices of which nc-Si thickness is 60, 90 and 130 ㎚ are 26, 77 and 119 ㎠/Vsec, respectively. The leakage current, however, is increased from 7.2×10?¹? to 1.9×10?? A at V GS =-4.4 V when the nc-Si thickness increases. It is originated from the decrease of the channel resistance.
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