The effects of Na on high pressure phases of CuIn0.5Ga0.5Se2 from ab initio calculation

Abstract

The effects of Na atoms on high pressure structural phase transitions of CuIn0.5Ga0.5Se2 (CIGS) were studied by an ab initio method using density functional theory. At ambient pressure, CIGS is known to have chalcopyrite () structure. The high pressure phase transitions of CIGS were proposed to be the same as the order in the CuInSe2 phase transitions which are structures. By using the mixture atoms method, the Na concentration in CIGS was studied at 0.1, 1.0 and 6.25%. The positive mixing enthalpy of Na at In/Ga sites (NaInGa) is higher than that of Na at Cu sites (NaCu). It confirmed previous studies that Na preferably substitutes on the Cu sites more than the (In, Ga) sites. From the energy–volume curves, we found that the effect of the Na substitutes is to reduce the hardness of CIGS under high pressure. The most significant effects occur at 6.25% Na. We also found that the electronic density of states of CIGS near the valence band maximum is increased noticeably in the chalcopyrite phase. The band gap is close in the cubic and orthorhombic phases. Also, the NaCu–Se bond length in the chalcopyrite phase is significantly reduced at 6.25% Na, compared with the pure Cu–Se bond length. Consequently, the energy band gap in this phase is wider than in pure CIGS, and the gap increased at the rate of 31 meV GPa−1 under pressure. The Na has a small effect on the transition pressure. The path of transformation from the cubic to orthorhombic phase was derived. The Cu–Se plane in the cubic phase displaced relatively parallel to the (In, Ga)–Se plane by 18% in order to transform to the Cmcm phase. The enthalpy barrier is 0.020 eV/atom, which is equivalent to a thermal energy of 248 K. We predicted that and Cmcm can coexist in some pressure range.