Abstract
Charge carrier recombination in the perovskite solar cells (PSCs) has a deep influence on the electrical performance, such as open circuit voltage, short circuit current, fill factor and ultimately power conversion efficiency. The impacts of injection barrier, recombination channels, doping properties of carrier transport layers and light intensity on the performance of PSCs are theoretically investigated by drift-diffusion model in this work. The results indicate that due to the injection barrier at the interfaces of perovskite and carrier transport layer, the accumulated carriers modify the electric field distribution throughout the PSCs. Thus, a zero electric field is generated at a specific applied voltage, with greatly increases the interfacial recombination, resulting in a local kink of current density-voltage (J-V) curve. This work provides an effective strategy to improve the efficiency of PSCs by pertinently reducing both the injection barrier and interfacial recombination.
Highlights
Despite high power conversion efficiency (PCE), over 20%, of organic-inorganic lead halide perovskite solar cells (PSCs) has been reported in recent years, arising from a high absorption coefficient, high carrier mobilities, and long charge carrier diffusion lengths,[1,2,3] the current density-voltage (J-V ) responses represent an anomalous hysteresis[4,5,6] and distortion
We find that the combination of the injection barrier and the trap-assisted bulk and interfacial recombination could nearperfectly fit the experimental data
We investigated the effect of trap-assisted interfacial recombination on the performance of PSCs based on the non-linear Poisson and drift-diffusion equations for electrons and holes throughout the device in one dimension
Summary
Despite high power conversion efficiency (PCE), over 20%, of organic-inorganic lead halide perovskite solar cells (PSCs) has been reported in recent years, arising from a high absorption coefficient, high carrier mobilities, and long charge carrier diffusion lengths,[1,2,3] the current density-voltage (J-V ) responses represent an anomalous hysteresis[4,5,6] and distortion. The combination of large enough injection barrier and interfacial recombination could produce a ‘local’ kink of the J-V curves. It is different from the S-shaped kink which is a ‘global’ kink. In view of these statements, in this work, we will comprehensively investigate the impacts of injection barrier, recombination channels, doping properties and light intensity on the electrical performance of PSCs. the physical origins of the corresponding local kink characteristic of PSCs are discussed and understood by drift-diffusion model
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