Abstract
Si/Fe and SiO2/Fe thin-film heterostructures are commonly seen in magnetic multilayer devices, whose magnetic properties are strongly influenced by intermixing at the interfaces. In this paper, Si-oxide/Fe bilayers were formed by depositing Si on Fe with in situ O2/Ar ion-beam bombardment during the Si deposition. The surface oxidation conditions were altered by applying different O2/Ar ratios (0–41%) in the ion-beam. The surface and cross-sectional morphologies, and the crystalline structures were characterized by transmission electron microscopy. The formation of Fe–O, Fe–Si and Si–O bonds at the interface of the O2/Ar ion-beam bombarded Si-oxide/Fe bilayers was evidenced by X-ray photoemission spectra. FeO, Fe3O4 and Fe2O3 at the interface resulted in a marked increase in the magnetic coercivity at low temperatures, as characterized by magnetometry.
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