Abstract

The effects of temperature and incident electron current density on the total electron emission yield (TEEY) of polycrystalline diamond deposited by the chemical vapour deposition technique (CVD) were investigated at low electron beam fluence. It was found that the TEEY reversibly increases with the temperature and reversibly decreases with the current density. This behaviour is explained on the basis of a dynamic competition between the accumulation of holes (positive space charge), which internally reduces the secondary electron emission, and the thermally activated conductivity that tends to reduce the space charge formation.

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