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Abstract
The effects of high temperature annealing on the conduction and memory properties of MNOS memory devices was studied. The results showed that the conductivity of the nitride increased with annealing time and temperature and that the memory retention qualities of the device were degraded. These results can be explained by the hypothesis that the heat‐treatment has increased the number of traps in the silicon nitride. The correlation of the theoretical and experimental results indicates that the traps are uniformly distributed through the silicon nitride layer and are not localized at the oxide nitride interface.
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