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Abstract
The effects of growth temperature on the microstructure and electrical barrier height of the PtSi Schottky barrier detector (SBD) have been investigated. PtSi films, 4 nm in thickness were deposited at various temperatures ranging from 350 to 550°C. The electron diffraction patterns showed that PtSi film formed at 350°C depicts an intermingling of both (1 1 0) and (1 2 1) orientations. However, only (1 2 1) orientation was shown when the PtSi films were formed above 450°C. Moreover, SBD formed at 350°C was found to depict an electrical barrier that is approximately 0.02 eV higher than those formed above 450°C. Although the microstructure and the electrical barrier height of the PtSi film do not change when the formation temperature was further increased from 450 to 550°C. Nevertheless, the higher formation temperature resulted in a larger grain size, indicating that grain size alone does not affect the barrier height of the resultant SBD.
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