Abstract
AlN epilayers were grown directly on sapphire (0001) substrates using a combined growth scheme, a low temperature nucleation layer and a high temperature pulsed-atomic-layer-epitaxy layer obtained via metal organic chemical vapor deposition. The effects of growth temperature on properties of AlN films were investigated by atomic force microscopy, high resolution X-Ray diffraction and transmittance spectral. Due to the strong influence of growth temperature on the mobility of Al adatoms and parasitic reaction, a different surface morphology and growth rate for AlN films were obtained by varying the growth temperature.
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