Abstract
A series of InNSb films have been grown on InSb (0 0 1) substrates under various growth conditions by plasma-assisted molecular beam epitaxy (MBE). The InNSb films were characterized by high-resolution x-ray diffraction, atomic force microscopy and Raman spectra. High quality single crystal InNSb films with N compositions up to 1.34% (from x-ray diffraction) were grown. It was found that the N composition of the films can be increased by increasing the In/Sb flux ratio and radio frequency (RF) power or by decreasing the growth temperature. The effects of growth parameters on the crystalline quality of the InNSb films were also discussed in detail.
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