The Effects of Graphene Doping on the In-Field Jc of MgB2 Wires

Abstract

The field and temperature dependence of the critical current density Jct were measured for both un-doped and graphene doped MgB2/Fe wires manufactured by 99.999% Crystalline Boron and 10% excess Magnesium (99%, 325 mesh). At 4.2 K and 10 T, Jct was estimated to be for the wire sintered at 800 degrees C for 30 minutes, the doped sample is almost improved as one order, compared with the best un-doped sample. At the same time, the temperature dependence of the upper critical field (Hc2) and the irreversibility field (Hirr) for the samples will also be included from the resistance (R)-temperature (T). A significant increase in the upper critical field is the main cause of the enhancement of the critical current density, Jct, in the high field region. The calculated active cross-sectional area fraction (A(F)) represents the connectivity factor between adjacent grains. This value is decreased with wire samples, which is why the improvement of transport Jct is lower than the improvement of magnetic Jcm in diffusion bulk sample.