Abstract
We report a detailed study of the grain orientations and grain boundary (GB) networks in Y2O3 films grown on Ni-5 at.%W substrates. Electron back scatter diffraction (EBSD) exhibited different GB misorientation angle distributions, strongly decided by Y2O3 films with different textures. The subsequent yttria-stabilized zirconia (YSZ) barrier and CeO2 cap layer were deposited on Y2O3 layers by radio frequency sputtering, and YBa2Cu3O7-δ (YBCO) films were deposited by pulsed laser deposition. For explicating the effects of the grain boundaries on the current carry capacity of YBCO films, a percolation model was proposed to calculate the critical current density (Jc) which depended on different GB misorientation angle distributions. The significantly higher Jc for the sample with sharper texture is believed to be attributed to improved GB misorientation angle distributions.
Highlights
In the past decades, YBa2Cu3O7-δ (YBCO) thin films deposited on single crystal achieved a high critical current density (Jc) in the range of 1~10 MA/cm2 at 77 K, self field [1]
We deposited CeO2/yttria-stabilized zirconia (YSZ)/Y2O3 buffer layers on the rolling-assisted biaxially textured substrate (RABiTS) using sputtering for coated conductors, different samples of Y2O3 buffered were characterized by X-ray powder diffraction (XRD) and Electron back scatter diffraction (EBSD), the results showed different textures and grain boundary networks
We focus on the texture and grain boundary (GB) development of Y2O3 seed layer which affect the current carry capacity of YBCO deposited on CeO2/YSZ/Y2O3 buffered RABiTS substrates
Summary
YBa2Cu3O7-δ (YBCO) thin films deposited on single crystal achieved a high critical current density (Jc) in the range of 1~10 MA/cm at 77 K, self field [1]. The grain boundary networks in the RABiTS tapes are transferred through buffer layers to YBCO layer, which has been characterized by transmission electron microscopy (TEM) and electron backscatter diffraction (EBSD) [13]. For the MOD process, the grain boundary networks were transferred from the buffer layer and meandered in the YBCO films [20]. We deposited CeO2/YSZ/Y2O3 buffer layers on the RABiTS using sputtering for coated conductors, different samples of Y2O3 buffered were characterized by X-ray powder diffraction (XRD) and EBSD, the results showed different textures and grain boundary networks. We focus on the texture and GB development of Y2O3 seed layer which affect the current carry capacity of YBCO deposited on CeO2/YSZ/Y2O3 buffered RABiTS substrates. A percolation model was proposed to calculate the Jc of modeled samples
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