Abstract
This work shows that the SRAM error rate for a commercial 65nm device in a dose rate environment can be highly dependent upon the integrated dose (dose rate × pulse duration). While the typical metric for such testing is dose rate upset level in rad(Si)/s, a series of dose rate experiments at Little Mountain Test Facility show dependence on the integrated dose. The error rate is also found to be dependent on the core voltage, and the pre-radiation value of the bits. We believe that these effects are explained by a well charge depletion caused by gamma ray photocurrent.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
