The effects of deposition temperatures on the characteristics of nitrogenated carbon films deposited on p‐type silicon substrates by thermal chemical vapor deposition

Abstract

This study deposits nitrogenated carbon (C:N) films on p‐type silicon (p‐Si) substrates to fabricate C:N/p‐Si photovoltaic solar cells by thermal chemical vapor deposition. Pure acetylene and nitrogen were used as the precursor gases. The deposition temperatures were set to 720, 730, 740, and 750°C. The chemical composition, microstructure, mechanical and electrical properties of C:N films prepared at different deposition temperatures were studied. The results show that when the deposition temperature is 730°C, the C:N/p‐Si photovoltaic solar cell has the best photovoltaic parameters, in which the open‐circuit voltage, short‐circuit current, fill factor, and conversion efficiency are 120 mV, 1.59 mA, 30.1%, and 0.06%, respectively. This preliminary result also shows that C:N films with large amounts of highly ordered graphite‐like structures, high N doping content, and low electrical resistivity are suitable to fabricate C:N/p‐Si photovoltaic solar cells.