Abstract

The electrical characteristics of a GaAs MESFET are shown to be variously affected by deep levels, depending on their location in the gap and where they are in the device. An appropriate variation of the DLTS technique can be used to characterize deep levels in a MESFET. Measurements performed at emission time constants down to 0.6 ns have permitted a quantitative study of microwave noise due to electron traps in the channel. A spurious backgating effect in GaAs integrated circuits is due to hole traps on the substrate side of the active layer-substrate interface. The free surface of GaAs MESFETs is usually depleted due to the presence of surface states. Their charge state can be modified by lateral carrier transport on the GaAs surface, which affects the device electrical performances.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.