The Effects of Current Type and Density on Dishing Phenomena in CMP Process

Abstract

The dishing phenomena of soft materials in chemical mechanical polishing (CMP) process were problematic in delineating inlaid metal patterns. The inlaid copper structures were fabricated on Si wafer where SiO2 was thermally grown. Seed layer was deposited by thermal evaporate method followed by copper electrodeposition. Copper was electrodeposited with IBM paddle type electroplating machine to obtain uniform thickness of coating. The dishing amounts were measured at various current density and current type. The dishing amounts with pattern density and line width were also measured. The losses of copper were not sensitively dependent on current density however those were dependent on current type. The dishing amount of copper was decreased at high pattern density especially over 50% and increased with line width. Surface topology and grain size of coating were investigated with surface profilometer and FESEM.