Abstract
Coherent potential approximation (CPA) is used to study the effects of charge carriers on the magnetic properties of ferromagnetic semiconductors. We have used a generalized mean-field theory for fluctuating f spins, and Vonsovskii model for interaction of conduction electrons with localized spins to calculate the edge of conduction band, the magnetization, the electron-spin polarization and the magnetic transition temperature. The results of our calculations are compared with the RKKY theory and the experimental results for Gd-doped EuO.
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