Abstract
Modern bipolar junction transistors (BJTs) tend to operate with saturated carrier velocity in the collector space-charge region. A physical analysis of the effects of velocity saturation on the output resistance of BJTs, especially for high current levels is presented. Physical analyses show that when the collector current density approaches a critical value, the Early voltage can increase significantly due to carrier-velocity saturation as the resulting base push-out partially offsets base-width modulation. This effect is also demonstrated in simulations with PISCES and MMSPICE.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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