Abstract
Time resolved photoluminescence (TRPL) is employed to study photogenerated electron-hole plasma expansion under strong illumination conditions in thin GaAs epilayer. We have observed spectral dependencies similar to ones which are usually observed on carrier's cooling. However, in our case they are caused by the diffusion of the degenerate electron-hole plasma perpendicular to the crystal surface. We have studied the influence of the degenerated carrier transport on the luminescence characteristics of bulk samples, both experimentally and by simulations. We suggest using this method to measure the transport coefficients of both degenerate and hot excess carriers in semiconductor structures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
