The effects of C substitution and disorder on the field dependent critical current density in MgB2 with nano-SiC additions

Abstract

In this work, nano sized SiC powders were mixed with Mg and B and reacted by either a one-step insitu or two-step method resulted in different level of C substitution. X-ray diffraction shows the presence of Mg2Si signifying that the reaction between SiC and Mg occurred leading to the release of C in samples reacted in one-step method. Moreover, the much reduced value of a-axis indicates C substitution took place. Resistivity measurements showed higher intragrain scattering owing to a higher density of defects and/or impurities. These samples also show higher Hirr and Hc2 at 20K in comparison to samples with mainly unreacted SiC (hence lower C substitution). More importantly, their Jc’s are more insensitive to high magnetic field (>4T) at 6K. However, at 20K the effect of C content on Jc(H) is less pronounced. Finally, the order of magnitude of Jc(H) at both 6K and 20K is rather dominated by pinning.