Abstract
Mn/Y co-doped Ba0.67Sr0.33TiO3 films with different double buffers were prepared by radio-frequency magnetron sputtering. The buffer dependence of the microstructure and electrical properties of the films was investigated. The results show that the thin films deposited on STO/LNO/Pt (111) and LNO/Pt (111) substrates present better crystallization and the film on STO/LNO/Pt (111) exhibit the growth of (100) textured characteristic. The films grown on LaNiO3 layer show a stronger dielectric response, while the insertion of STO layer improves dielectric loss and leakage current. STO/LNO Co-buffer is beneficial to the comprehensive electrical properties of the Mn/Y co-doped BST thin film.
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