Abstract
This paper reports the effects of beryllium (Be) doping in In 1− x− y Ga x Al y As layers grown lattice-matched to InP(1 0 0) substrates by molecular beam epitaxy. Hall effect measurements showed that hole concentrations as high as 2.94×10 19 cm −3 were achieved, and the concentration decreased with further increase in the Be cell temperature. Depending on the hole concentration, good optical quality was achieved as verified by photoluminescence (PL) measurements. X-ray diffraction measurements showed lattice mismatch values of lower than 8.6×10 −4 in most samples. An intense PL peak (5 K) at 1.089 eV which is attributed to band-acceptor recombination was observed from the sample with the lowest hole concentration of 2.28×10 16 cm −3. This sample showed the lowest PL full-width at half-maximum of 8 meV (at 5 K) for the free exciton recombination. To the best of our knowledge, this is the lowest value reported to date. An increase in the hole concentration caused a merging of the band-acceptor and free exciton recombination lines to form a broad PL spectrum. A shift in the free exciton peak position in the PL spectrum was observed following an increase in the hole concentration, an effect which was probably due to degeneracy.
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