Abstract
The effects of band bending on photoconductivity in hydrogenated amorphous silicon were systematically investigated by measuring the photoconductivity on field effect transistors as a function of the applied gate voltage. The intensity and the spectral dependence of the photoconductivity showed large changes due to band bending. The results suggest that much of the conflicting photoconductivity results are due to band bending. There is some evidence for depleting interface gap states by band bending.
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