Abstract
The effects of the annealing temperature on photoluminescence (PL) of non-stoichiometric silicon nitride (SiN x ) thin films deposited by plasma enhanced chemical vapor deposition (PECVD) using ammonia and silane mixtures at 200 °C were investigated. The optical property and the chemical composition of the films annealed at different temperatures were investigated by PL spectroscopy and Fourier transform infrared absorption spectroscopy (FTIR), respectively. Based on the PL results and the analyses of the bonding configurations of the films, the light emission is attributed to the quantum confinement effect of the carriers inside silicon nanoparticles and radiative defect-related states. These results provide a better understanding of optical properties of silicon nanoparticles embedded in silicon nitride films and are useful for the application of nanosize silicon semiconductor material.
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