The Effects of Annealing and Discharging on the Characteristics of MgO Thin Films Prepared by Ion Beam-Assisted Deposition as a Protective Layer of AC-PDP

Abstract

This study investigated the effects of annealing and dischargingon the characteristics of MgO thin films prepared by ionbeam-assisted deposition as a protective layer of AC-PDP. By anannealing process at a temperature of 450 oC for more thanthree hours, the crystallinity of the deposited MgO films wasimproved, but the surface of the (200)-oriented MgO thin films inthe vicinity of the discharge electrodes, especially on the innersides of the electrodes, was subjected to crack formation. Thefailure mechanism of the (200)-oriented MgO films was due to thecompressive stress of MgO films plus the additional compressivestress induced by the differences in the coefficient of thermalexpansion between the electrode and the dielectric layer. In thedischarging process, all MgO films were eroded unevenly, and theserious erosion occurred near the edges of the discharge electrodes.ATM(atomic force microscopy) images show that the eroded surface ofthe (200)-oriented MgO thin film is smoother than that of the(111)-oriented film. Also, the (200)-oriented MgO thin film shows animproved ability to resist ion erosion compared to the(111)-oriented film.