Abstract
The microstructural changes caused by Xe26+ swift heavy ions on polycrystalline SiC were investigated. Chemically vapour deposited SiC samples were irradiated by 167 MeV Xe26+ SHI with fluences of 1 × 1012 and 5 × 1014 cm−2 at room temperature (RT). The sample composition, phase identification, residual stress and microstructural changes were investigated using X-ray diffraction (XRD) and Raman spectroscopy. The virgin polycrystalline SiC sample was composed of 3C-SiC and 6H-SiC. SHI irradiation caused lattice disorder and lattice expansion. The lattice volume of the SiC samples was observed to increase from 82.2021 Å3 before irradiation to 82.7656 Å3 after irradiating to a fluence of 5 × 1014 cm−2. The SiC sample before and after irradiation had tensile and bi-axial stress which was not homogeneous. The maximum irradiation-induced stress on the SiC microstructure did not exceed 690 MPa after irradiating to the highest fluence.
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