Abstract
The effects of γ-ray irradiation on graphene/n–Si Schottky diodes are investigated. The electrical characteristics are measured before and after serial radiation doses in a dark environment. Experimental results show an increase of reverse current and ideality factor, while the Schottky barrier height decreases. The XPS results indicate that γ-ray irradiation mainly leads to a break in Si–O and C=C bonds; the C dangling bonds can combine with dangling O on the surface of SiO2 while leaving Si dangling bonds in SiO2. These Si dangling bonds seriously degrade the electrical performance of the device.
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