Abstract
The variations in the threshold voltage shift in p-channel power VDMOSFET during the gamma ray irradiation was investigated in the dose range from 10 to 100 Gy. The investigations were performed without the gate bias and with 5 V gate bias. The devices with 5 V gate bias exhibit a linear dependence between the threshold voltage shift and the radiation dose. The densities of radiation-induced fixed and switching traps were determined from the sub-threshold I-V characteristics using the midgap technique. It was shown that the creation of fixed traps is dominant during the irradiation. The possible mechanisms responsible for the fixed and switching traps creation are also analyzed in this paper.
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