Abstract
We report the physical analysis of MG/ZrN/Zr-graded Dy2O3/Si MIS structures.The key process parameters such as postannealing temperature and doping location are examined.Electrical properties such as flatband voltage shift, leakage current, EOT are shown and calculated. Nano-film Dy2O3:Zr and Dy2O3 gate oxide stacks with and without ZrN capping layer were fabricated. The electrical and physical properties were compared in the PMA temperature range of 550-850?C. The flatband voltage shift decreases with increasing the annealing temperature, which indicates the reduction in oxide trap charges especially for the MIS structures with ZrN capping. The dielectric constant is enhanced due to lesser outdiffusion of Ti, O, and Dy atoms from ZrN layer. The atomic percentage was studied by the depth profile of X-ray photoelectron spectra.
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