Abstract
In this paper, Cd10–xZnxS (x = 0.1, 0.3, 0.5) films were deposited by using chemical spray pyrolysis technique, the molar concentration precursor solution was 0.15 M/L. Depositions were done at 350?C on cleaned glass substrates. X-ray diffraction technique (XRD) studies for all the prepared film; all the films are crystalline with hexagonal structure .The optical properties of the prepared films were studied using measurements from VIS-UV-IR spectrophotometer at wave-length with the range 300 - 900 nm; the average transmission of the minimum doping ratio (Zn at 0.1%) was about 55% in the VIS region, it was decrease at the increasing of Zn concentration in the CdS films, The band gap of the doped CdS films was varied as 3.7, 3.8, 3.6 eV at x = 0.1, 0.3 and 0.5 respectively.
Highlights
Cadmium Zinc Sulfides (Cd10–xZnxS) have properties in between CdS and ZnS
X-ray diffraction technique (XRD) studies for all the prepared film; all the films are crystalline with hexagonal structure .The optical properties of the prepared films were studied using measurements from VIS-UV-IR spectrophotometer at wavelength with the range 300 - 900 nm; the average transmission of the minimum doping ratio (Zn at 0.1%) was about 55% in the VIS region, it was decrease at the increasing of Zn concentration in the CdS films, The band gap of the doped CdS films was varied as 3.7, 3.8, 3.6 eV at x = 0.1, 0.3 and 0.5 respectively
The CdZnS thin film band structure has a larger energy gap than CdS. This makes the material much more attractive for fabrication of solar cells. It has been a widely used as a wide band gap window material in hetrojunction photovoltaic solar cells and photoconductive devices [1,2]
Summary
Addition of Zn to the most widely used CdS buffer layer material enhances the electronic and optical properties of optoelectronics devices. The CdZnS thin film band structure has a larger energy gap than CdS. This makes the material much more attractive for fabrication of solar cells. It has been a widely used as a wide band gap window material in hetrojunction photovoltaic solar cells and photoconductive devices [1,2]. It is essential to have an insight into the optical properties, which include the optical band gap, reflectivity, absorption coefficient, the dielectric constant and the refractive index as a prerequisite in using the suitable material for device applications. The aim of this study it is to investigate effect of deposition parameters on the structural and optical properties of Cd10–xZnxS thin films to calculate optical constants such as refractive index and dielectric constant
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