The effect of Yb doping on ZnO thin films obtained via a low-temperature spin coating method

Abstract

The spin coating method was employed to fabricate Yb-doped ZnO thin films at 0, 3, 5, 7, and 9 at.% over a glass substrate at low temperature. X-ray diffraction analysis revealed that the hexagonal wurtzite structure was retained even at high doping contents. With the incorporation of Yb+3 ions, a slight decrease in the lattice parameters and crystallite size was observed as the ytterbium content increased. X-ray photoelectron spectroscopy confirmed the presence of ytterbium in the doped ZnO films, and the oxidation state of ytterbium was 3+ for all the samples. Morphological studies revealed a surface microstructure formed by micro islands, which tended to be denser as the ytterbium content increased. Optical transmittance was observed at approximately 75–85%, a blueshift was observed, and consequently, an increase in the bandgap, which varies from 3.0 to 3.2 eV, was observed. The refractive index and extinction coefficient decreased as the ytterbium dopant concentration increased. The photoluminescence results exhibited a strong ultraviolet emission, allowing the use of these thin films in optoelectronic applications.