Abstract
The microstructure, mechanical and electrical properties of vacuum annealed tantalum films were studied. X-ray diffraction spectra confirmed the presence of mixed (α and β) phases in the as-deposited Ta films. After vacuum annealing (at 750°C for 1h), the metastable β-phase was completely transformed to stable α-phase. The grain size increased (from 35±3nm to 92±3nm) with the increase in annealing temperature. The mixed (α and β) phases resulted in higher hardness and higher Young's modulus. The film annealed at 750°C for 1h exhibited lower resistivity (52±4μΩ-cm), lower hardness (H=10.4±1.3GPa) and lower Young's modulus (Y=185±5GPa) as compared to the as-deposited and annealed (at temperature<750°C) films. This is attributed to the phase transformation from β to α at an annealing temperature of 750°C.
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