Abstract
The sintering temperature of the bismuth-based temperature-stable dielectrics (BNN-BZN) is reduced down to 850 °C with 1.0 wt % of V2O5, which is the lowest to our knowledge. The effect of dopant is studied in detail. The V2O5 seems to provide an eutectic melt below the sintering temperature to increase the sinterability. A composite character was observed with 1.0 wt % of V2O2 doping, while a new solid-solution phase was found without or fewer amounts of additive. Nevertheless, the obtained physical property of the sample with 1.0 wt % of V2O5 is promising. Following combination of physical properties is obtained consistently without any quenching procedure; dielectric constant >95, Q ∼ 2000, T.C. = −8.6 ppm (30–100 °C), and specific resistivity = 1012Ω cm.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
