Abstract
The SiNx/SiOx and SiOx/SiNx/SiOx structures were fabricated on silicon substrates by plasma-enhanced and low-pressure chemical vapour deposition. It was shown that upper silicon oxide layer enhances photoluminescence yield from silicon nitride layer in three times. Furthermore, top silicon oxide layer protects underlying nitride layer from un-intended oxidation during rapid thermal annealing in inert ambient (1100 °C, 3 min). The role of silicon oxide unintentionally formed during SiNx annealing and the specially deposited top SiO2 layer on SiNx photoluminescence have been discussed.
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