Abstract
Armchair graphene nanoribbon (AGNR) for n=3m and n=3m+1 family carrier statistic under uniaxial strain is studied by means of an analytical model based on tight binding approximation. The uniaxial strain of AGNR carrier statistic models includes the density of state, carrier concentration, and carrier velocity. From the simulation, it is found that AGNR carrier concentration has not been influenced by the uniaxial strain at low normalized Fermi energy for n=3m and n=3m+1. In addition, the carrier velocity of AGNR is mostly affected by strain at high concentration of n≈3.0×107 and 1.0 × 107 m−1 for n=3m and n=3m+1, respectively. The result obtained gives physical insight into the understanding of uniaxial strain in AGNR.
Highlights
Graphene has attracted numerous research attention since it was isolated in 2004 by Novoselov et al [1]
Uniaxial strain Armchair graphene nanoribbon (AGNR) model The energy dispersion relation of graphene nanoribbon (GNR) under tight binding (TB) approximation incorporating uniaxial strain is represented by Equation 1 taken from reference [15]
In this paper, the uniaxial strain AGNR for n = 3m and n = 3m + 1 family carrier statistic is analytically modeled, and their behaviors are studied
Summary
Graphene has attracted numerous research attention since it was isolated in 2004 by Novoselov et al [1]. Due to its unique hexagonal symmetry, graphene posses many remarkable electrical and physical properties desirable in electronic devices. Strain engineering have started to emerge in graphene electronics [5]. It is found that strain applied to graphene can modify its band structure, altering its electronic properties [6,7,8]. Uniaxial strain helps in improving the graphene device’s electrical performance [9]. Strain in graphene can be characterized by two major varieties, namely uniaxial and shear. This strain behaves differently on graphene depending on the edge shape, namely zigzag or armchair [8].
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