Abstract
The effect of ultraviolet (UV) irradiation on the minority carrier recombination lifetime was studied using a laser‐microwave photoconductance (LM‐PCD) method for wafers oxidized at 700, 900, and 1000°C and for different oxidation times at these temperatures. For wafers oxidized at 1000°C, the lifetime was found to decrease with UV irradiation. For wafers oxidized at 700 and 900°C, the lifetimes could decrease or increase depending on the duration of oxidation and UV irradiation.
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